Quantum systems in silicon carbide for sensing applications.

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing.

Direct femtosecond laser writing has been used to produce localized regions of photo-luminescent emission in 4H- and 6H-silicon carbide (SiC). Arrays of active color centers were fabricated by different pulse laser energies in the sites of square grids at various depths (from surface level to 10 µm below surface). We optically characterized the fabricated color centers using confocal imaging with 532 and 780 nm excitation, photo-luminescence spectroscopy, and lifetime decay at room temperature. We show that the technique can produce specifically the silicon vacancy color center emitting in the range 850-950 nm and other emitters in the 700 nm. This method can be adopted to engineer color centers in (SiC) at different depths in the material for single-photon generation, sensing, display fabrication, and light emitting diodes.

Robust, tunable, and high purity triggered single photon source at room temperature using a nitrogen-vacancy defect in diamond in an open microcavity.

We report progress in the development of tunable room temperature triggered single photon sources based on single nitrogen-vacancy (NV) centres in nanodiamond coupled to open access optical micro-cavities. The feeding of fluorescence from an NV centre into the cavity mode increases the spectral density of the emission and results in an output stream of triggered single photons with spectral line width of order 1 nm, tunable in the range 640 - 700 nm. We record single photon purities exceeding 96% and estimated device efficiencies up to 3%. We compare performance using plano-concave microcavities with radii of curvature from 25 µm to 4 µm and show that up to 17% of the total emission is fed into the TEM00 mode. Pulsed Hanbury-Brown Twiss (HBT) interferometry shows that an improvement in single photon purity is facilitated due to the increased spectral density.

Fluorescent color centers in laser ablated 4H-SiC nanoparticles.

Nanostructured and bulk silicon carbide (SiC) has recently emerged as a novel platform for quantum nanophotonics due to its harboring of paramagnetic color centers, having immediate applications as a single photon source and spin optical probes. Here, using ultra-short pulsed laser ablation, we fabricated from electron irradiated bulk 4H-SiC, 40-50 nm diameter SiC nanoparticles, fluorescent at 850-950 nm. This photoluminescence is attributed to the silicon vacancy color centers. We demonstrate that the original silicon vacancy color centers from the target sample were retained in the final nanoparticles solution, exhibiting excellent colloidal stability in water over several months. Our work is relevant for quantum nanophotonics, magnetic sensing, and biomedical imaging applications.

A review on single photon sources in silicon carbide.

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Single-photon emitting diode in silicon carbide.

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

A silicon carbide room-temperature single-photon source.

Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.

On-chip manipulation of single photons from a diamond defect.

Operating reconfigurable quantum circuits with single photon sources is a key goal of photonic quantum information science and technology. We use an integrated waveguide device containing directional couplers and a reconfigurable thermal phase controller to manipulate single photons emitted from a chromium related color center in diamond. Observation of both a wavelike interference pattern and particlelike sub-Poissionian autocorrelation functions demonstrates coherent manipulation of single photons emitted from the chromium related center and verifies wave particle duality.

Radiative and nonradiative decay rates in chromium-related centers in nanodiamonds.

We address for the first time the measurement of nonradiative decay rates in Cr-related centers in nanodiamonds. Compared to our previous quantum efficiency measurement of Cr centers created in bulk diamond, separate measurements of radiative and nonradiative decay rates in grown nanodiamonds prove more challenging due to size dependence effects. We demonstrate in this Letter that, using defocused dipole imaging and collection efficiency calculation via finite-difference time-domain (FDTD), a quantum efficiency up to 0.9 can be inferred to Cr-related centers showing a 2-level system photon statistics.

Imaging and quantum-efficiency measurement of chromium emitters in diamond.

We present direct imaging of the emission pattern of individual chromium-based single photon emitters in diamond and measure their quantum efficiency. By imaging the excited state transition dipole intensity distribution in the back focal plane of high numerical aperture objective, we determined its 3D orientation. Employing ion implantation techniques, the emitters were placed at various distances from the diamond-air interface. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, we measured an average quantum efficiency of 28%.

Spatial and spectral mode selection of heralded single photons from pulsed parametric down-conversion.

We describe an experiment in which photon pairs from a pulsed parametric down-conversion (PDC) source were coupled into single-mode fibers with heralding efficiencies as high as 70%. Heralding efficiency or mode preparation efficiency is defined as the probability of finding a photon in a fiber in a definite state, given the detection of its twin. Heralding efficiencies were obtained for a range of down-conversion beam-size configurations. Analysis of spatial and spectral mode selection, and their mutual correlation, provides a practical guide for engineering PDC-produced single photons in a definite mode and spectral emission band. The spectrum of the heralded photons were measured for each beam configuration, to determine the interplay between transverse momentum and spectral entanglement on the preparation efficiency.

Experimental evidence for bounds on quantum correlations.

We implemented the experiment proposed by Cabello in the preceding Letter to test the bounds of quantum correlation. As expected from the theory we found that, for certain choices of local observables, Tsirelson's bound of the Clauser-Horne-Shimony-Holt inequality (2 x square root of 2) is not reached by any quantum states.